Epitaxial and large area Sb(2)Te(3) thin films on silicon by MOCVD

Antimony telluride (Sb(2)Te(3)) thin films were prepared by a room temperature Metal–Organic Chemical Vapor Deposition (MOCVD) process using antimony chloride (SbCl(3)) and bis(trimethylsilyl)telluride (Te(SiMe(3))(2)) as precursors. Pre-growth and post-growth treatments were found to be pivotal in...

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Detalles Bibliográficos
Autores principales: Rimoldi, Martino, Cecchini, Raimondo, Wiemer, Claudia, Lamperti, Alessio, Longo, Emanuele, Nasi, Lucia, Lazzarini, Laura, Mantovan, Roberto, Longo, Massimo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9054238/
https://www.ncbi.nlm.nih.gov/pubmed/35520434
http://dx.doi.org/10.1039/d0ra02567d

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9054238/
https://www.ncbi.nlm.nih.gov/pubmed/35520434
http://dx.doi.org/10.1039/d0ra02567d

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