Photoelectrical properties of graphene/doped GeSn vertical heterostructures

GeSn is a group IV alloy material with a narrow bandgap, making it favorable for applications in sensing and imaging. However, strong surface carrier recombination is a limiting factor. To overcome this, we investigate the broadband photoelectrical properties of graphene integrated with doped GeSn,...

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Detalles Bibliográficos
Autores principales: Lv, Yanhui, Li, Hui, Ó Coileáin, Cormac, Zhang, Duan, Heng, Chenglin, Chang, Ching-Ray, Hung, K.-M., Cheng, Huang Hsiang, Wu, Han-Chun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9054288/
https://www.ncbi.nlm.nih.gov/pubmed/35517749
http://dx.doi.org/10.1039/d0ra04308g

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9054288/
https://www.ncbi.nlm.nih.gov/pubmed/35517749
http://dx.doi.org/10.1039/d0ra04308g

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