Cargando…

Photoelectrical properties of graphene/doped GeSn vertical heterostructures

GeSn is a group IV alloy material with a narrow bandgap, making it favorable for applications in sensing and imaging. However, strong surface carrier recombination is a limiting factor. To overcome this, we investigate the broadband photoelectrical properties of graphene integrated with doped GeSn,...

Descripción completa

Detalles Bibliográficos
Autores principales: Lv, Yanhui, Li, Hui, Ó Coileáin, Cormac, Zhang, Duan, Heng, Chenglin, Chang, Ching-Ray, Hung, K.-M., Cheng, Huang Hsiang, Wu, Han-Chun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9054288/
https://www.ncbi.nlm.nih.gov/pubmed/35517749
http://dx.doi.org/10.1039/d0ra04308g
_version_ 1784697157723357184
author Lv, Yanhui
Li, Hui
Ó Coileáin, Cormac
Zhang, Duan
Heng, Chenglin
Chang, Ching-Ray
Hung, K.-M.
Cheng, Huang Hsiang
Wu, Han-Chun
author_facet Lv, Yanhui
Li, Hui
Ó Coileáin, Cormac
Zhang, Duan
Heng, Chenglin
Chang, Ching-Ray
Hung, K.-M.
Cheng, Huang Hsiang
Wu, Han-Chun
author_sort Lv, Yanhui
collection PubMed
description GeSn is a group IV alloy material with a narrow bandgap, making it favorable for applications in sensing and imaging. However, strong surface carrier recombination is a limiting factor. To overcome this, we investigate the broadband photoelectrical properties of graphene integrated with doped GeSn, from the visible to the near infrared. It is found that photo-generated carriers can be separated and transported with a higher efficiency by the introduction of the graphene layer. Considering two contrasting arrangements of graphene on p-type and n-type GeSn films, photocurrents were suppressed in graphene/p-type GeSn heterostructures but enhanced in graphene/n-type GeSn heterostructures when compared with control samples without graphene. Moreover, the enhancement (suppression) factor increases with excitation wavelength but decreases with laser power. An enhancement factor of 4 is achieved for an excitation wavelength of 1064 nm. Compared with previous studies, it is found that our graphene/n-type GeSn based photodetectors provide a much wider photodetection range, from 532 nm to 1832 nm, and maintain comparable responsivity. Our experimental findings highlight the importance of the induced bending profile on the charge separation and provides a way to design high performance broadband photodetectors.
format Online
Article
Text
id pubmed-9054288
institution National Center for Biotechnology Information
language English
publishDate 2020
publisher The Royal Society of Chemistry
record_format MEDLINE/PubMed
spelling pubmed-90542882022-05-04 Photoelectrical properties of graphene/doped GeSn vertical heterostructures Lv, Yanhui Li, Hui Ó Coileáin, Cormac Zhang, Duan Heng, Chenglin Chang, Ching-Ray Hung, K.-M. Cheng, Huang Hsiang Wu, Han-Chun RSC Adv Chemistry GeSn is a group IV alloy material with a narrow bandgap, making it favorable for applications in sensing and imaging. However, strong surface carrier recombination is a limiting factor. To overcome this, we investigate the broadband photoelectrical properties of graphene integrated with doped GeSn, from the visible to the near infrared. It is found that photo-generated carriers can be separated and transported with a higher efficiency by the introduction of the graphene layer. Considering two contrasting arrangements of graphene on p-type and n-type GeSn films, photocurrents were suppressed in graphene/p-type GeSn heterostructures but enhanced in graphene/n-type GeSn heterostructures when compared with control samples without graphene. Moreover, the enhancement (suppression) factor increases with excitation wavelength but decreases with laser power. An enhancement factor of 4 is achieved for an excitation wavelength of 1064 nm. Compared with previous studies, it is found that our graphene/n-type GeSn based photodetectors provide a much wider photodetection range, from 532 nm to 1832 nm, and maintain comparable responsivity. Our experimental findings highlight the importance of the induced bending profile on the charge separation and provides a way to design high performance broadband photodetectors. The Royal Society of Chemistry 2020-06-02 /pmc/articles/PMC9054288/ /pubmed/35517749 http://dx.doi.org/10.1039/d0ra04308g Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by-nc/3.0/
spellingShingle Chemistry
Lv, Yanhui
Li, Hui
Ó Coileáin, Cormac
Zhang, Duan
Heng, Chenglin
Chang, Ching-Ray
Hung, K.-M.
Cheng, Huang Hsiang
Wu, Han-Chun
Photoelectrical properties of graphene/doped GeSn vertical heterostructures
title Photoelectrical properties of graphene/doped GeSn vertical heterostructures
title_full Photoelectrical properties of graphene/doped GeSn vertical heterostructures
title_fullStr Photoelectrical properties of graphene/doped GeSn vertical heterostructures
title_full_unstemmed Photoelectrical properties of graphene/doped GeSn vertical heterostructures
title_short Photoelectrical properties of graphene/doped GeSn vertical heterostructures
title_sort photoelectrical properties of graphene/doped gesn vertical heterostructures
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9054288/
https://www.ncbi.nlm.nih.gov/pubmed/35517749
http://dx.doi.org/10.1039/d0ra04308g
work_keys_str_mv AT lvyanhui photoelectricalpropertiesofgraphenedopedgesnverticalheterostructures
AT lihui photoelectricalpropertiesofgraphenedopedgesnverticalheterostructures
AT ocoileaincormac photoelectricalpropertiesofgraphenedopedgesnverticalheterostructures
AT zhangduan photoelectricalpropertiesofgraphenedopedgesnverticalheterostructures
AT hengchenglin photoelectricalpropertiesofgraphenedopedgesnverticalheterostructures
AT changchingray photoelectricalpropertiesofgraphenedopedgesnverticalheterostructures
AT hungkm photoelectricalpropertiesofgraphenedopedgesnverticalheterostructures
AT chenghuanghsiang photoelectricalpropertiesofgraphenedopedgesnverticalheterostructures
AT wuhanchun photoelectricalpropertiesofgraphenedopedgesnverticalheterostructures