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Photoelectrical properties of graphene/doped GeSn vertical heterostructures
GeSn is a group IV alloy material with a narrow bandgap, making it favorable for applications in sensing and imaging. However, strong surface carrier recombination is a limiting factor. To overcome this, we investigate the broadband photoelectrical properties of graphene integrated with doped GeSn,...
Autores principales: | Lv, Yanhui, Li, Hui, Ó Coileáin, Cormac, Zhang, Duan, Heng, Chenglin, Chang, Ching-Ray, Hung, K.-M., Cheng, Huang Hsiang, Wu, Han-Chun |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
The Royal Society of Chemistry
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9054288/ https://www.ncbi.nlm.nih.gov/pubmed/35517749 http://dx.doi.org/10.1039/d0ra04308g |
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