Vertically stacked SnSe homojunctions and negative capacitance for fast low-power tunneling transistors

The two-dimensional (2D) vertical van der Waals (vdW) stacked homojunction is an advantageous configuration for fast low-power tunneling field effect transistors (TFETs). We simulate the device performance of the sub-10 nm vertical SnSe homojunction TFETs with ab initio quantum transport calculation...

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Detalles Bibliográficos
Autores principales: Li, Hong, Liang, Jiakun, Xu, Peipei, Luo, Jing, Liu, Fengbin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9054299/
https://www.ncbi.nlm.nih.gov/pubmed/35517741
http://dx.doi.org/10.1039/d0ra03279d

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9054299/
https://www.ncbi.nlm.nih.gov/pubmed/35517741
http://dx.doi.org/10.1039/d0ra03279d

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