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Vertically stacked SnSe homojunctions and negative capacitance for fast low-power tunneling transistors
The two-dimensional (2D) vertical van der Waals (vdW) stacked homojunction is an advantageous configuration for fast low-power tunneling field effect transistors (TFETs). We simulate the device performance of the sub-10 nm vertical SnSe homojunction TFETs with ab initio quantum transport calculation...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9054299/ https://www.ncbi.nlm.nih.gov/pubmed/35517741 http://dx.doi.org/10.1039/d0ra03279d |