Cargando…

A bow-free freestanding GaN wafer

For applications as high-brightness light-emitting-diodes, a bow-free freestanding gallium nitride (GaN) wafer 2 inch in diameter and ∼185 μm in thickness was fabricated by process-designing pit and mirror GaN layers grown via hydride-vapor-phase epitaxy, laser lift-off, N-face polishing of the pit...

Descripción completa

Detalles Bibliográficos
Autores principales: Shim, Jae-Hyoung, Park, Jin-Seong, Park, Jea-Gun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9054521/
https://www.ncbi.nlm.nih.gov/pubmed/35516654
http://dx.doi.org/10.1039/d0ra01024c