Cargando…
A bow-free freestanding GaN wafer
For applications as high-brightness light-emitting-diodes, a bow-free freestanding gallium nitride (GaN) wafer 2 inch in diameter and ∼185 μm in thickness was fabricated by process-designing pit and mirror GaN layers grown via hydride-vapor-phase epitaxy, laser lift-off, N-face polishing of the pit...
| Autores principales: | , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2020
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9054521/ https://www.ncbi.nlm.nih.gov/pubmed/35516654 http://dx.doi.org/10.1039/d0ra01024c |