New fabrication method for di-indium tri-sulfuric (In(2)S(3)) thin films

Di-indium tri-sulfuric (In(2)S(3)) thin films are fabricated with annealing indium thin films in a sulfur environment. The effect of both annealing temperature and pressure on the structure, morphology, Raman, and photoluminescence (PL) spectroscopy has been studied. The X-ray diffraction (XRD) and...

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Detalles Bibliográficos
Autores principales: Ali, Ahmed I., Ibrahim, Medhat, Hassen, A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9055042/
https://www.ncbi.nlm.nih.gov/pubmed/35487954
http://dx.doi.org/10.1038/s41598-022-11107-w

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9055042/
https://www.ncbi.nlm.nih.gov/pubmed/35487954
http://dx.doi.org/10.1038/s41598-022-11107-w

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