New fabrication method for di-indium tri-sulfuric (In(2)S(3)) thin films

Di-indium tri-sulfuric (In(2)S(3)) thin films are fabricated with annealing indium thin films in a sulfur environment. The effect of both annealing temperature and pressure on the structure, morphology, Raman, and photoluminescence (PL) spectroscopy has been studied. The X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) of the prepared thin films showed different structural phases and morphology with varying annealing temperature and pressure. Energy dispersive X-ray (EDX) analysis confirmed the chemical composition and the atomic ratio of In/S for the In(2)S(3) thin films. The optimum annealing conditions of In(2)S(3) thin films are 550 °C and 100 Torr. The outcome results revealed a new good growth method for In(2)S(3) thin films to be used for different applications.