New fabrication method for di-indium tri-sulfuric (In(2)S(3)) thin films

Di-indium tri-sulfuric (In(2)S(3)) thin films are fabricated with annealing indium thin films in a sulfur environment. The effect of both annealing temperature and pressure on the structure, morphology, Raman, and photoluminescence (PL) spectroscopy has been studied. The X-ray diffraction (XRD) and...

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Detalles Bibliográficos
Autores principales: Ali, Ahmed I., Ibrahim, Medhat, Hassen, A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9055042/
https://www.ncbi.nlm.nih.gov/pubmed/35487954
http://dx.doi.org/10.1038/s41598-022-11107-w
_version_ 1784697316062527488
author Ali, Ahmed I.
Ibrahim, Medhat
Hassen, A.
author_facet Ali, Ahmed I.
Ibrahim, Medhat
Hassen, A.
author_sort Ali, Ahmed I.
collection PubMed
description Di-indium tri-sulfuric (In(2)S(3)) thin films are fabricated with annealing indium thin films in a sulfur environment. The effect of both annealing temperature and pressure on the structure, morphology, Raman, and photoluminescence (PL) spectroscopy has been studied. The X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) of the prepared thin films showed different structural phases and morphology with varying annealing temperature and pressure. Energy dispersive X-ray (EDX) analysis confirmed the chemical composition and the atomic ratio of In/S for the In(2)S(3) thin films. The optimum annealing conditions of In(2)S(3) thin films are 550 °C and 100 Torr. The outcome results revealed a new good growth method for In(2)S(3) thin films to be used for different applications.
format Online
Article
Text
id pubmed-9055042
institution National Center for Biotechnology Information
language English
publishDate 2022
publisher Nature Publishing Group UK
record_format MEDLINE/PubMed
spelling pubmed-90550422022-05-01 New fabrication method for di-indium tri-sulfuric (In(2)S(3)) thin films Ali, Ahmed I. Ibrahim, Medhat Hassen, A. Sci Rep Article Di-indium tri-sulfuric (In(2)S(3)) thin films are fabricated with annealing indium thin films in a sulfur environment. The effect of both annealing temperature and pressure on the structure, morphology, Raman, and photoluminescence (PL) spectroscopy has been studied. The X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) of the prepared thin films showed different structural phases and morphology with varying annealing temperature and pressure. Energy dispersive X-ray (EDX) analysis confirmed the chemical composition and the atomic ratio of In/S for the In(2)S(3) thin films. The optimum annealing conditions of In(2)S(3) thin films are 550 °C and 100 Torr. The outcome results revealed a new good growth method for In(2)S(3) thin films to be used for different applications. Nature Publishing Group UK 2022-04-29 /pmc/articles/PMC9055042/ /pubmed/35487954 http://dx.doi.org/10.1038/s41598-022-11107-w Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Ali, Ahmed I.
Ibrahim, Medhat
Hassen, A.
New fabrication method for di-indium tri-sulfuric (In(2)S(3)) thin films
title New fabrication method for di-indium tri-sulfuric (In(2)S(3)) thin films
title_full New fabrication method for di-indium tri-sulfuric (In(2)S(3)) thin films
title_fullStr New fabrication method for di-indium tri-sulfuric (In(2)S(3)) thin films
title_full_unstemmed New fabrication method for di-indium tri-sulfuric (In(2)S(3)) thin films
title_short New fabrication method for di-indium tri-sulfuric (In(2)S(3)) thin films
title_sort new fabrication method for di-indium tri-sulfuric (in(2)s(3)) thin films
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9055042/
https://www.ncbi.nlm.nih.gov/pubmed/35487954
http://dx.doi.org/10.1038/s41598-022-11107-w
work_keys_str_mv AT aliahmedi newfabricationmethodfordiindiumtrisulfuricin2s3thinfilms
AT ibrahimmedhat newfabricationmethodfordiindiumtrisulfuricin2s3thinfilms
AT hassena newfabricationmethodfordiindiumtrisulfuricin2s3thinfilms

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