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New fabrication method for di-indium tri-sulfuric (In(2)S(3)) thin films
Di-indium tri-sulfuric (In(2)S(3)) thin films are fabricated with annealing indium thin films in a sulfur environment. The effect of both annealing temperature and pressure on the structure, morphology, Raman, and photoluminescence (PL) spectroscopy has been studied. The X-ray diffraction (XRD) and...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9055042/ https://www.ncbi.nlm.nih.gov/pubmed/35487954 http://dx.doi.org/10.1038/s41598-022-11107-w |