Two-dimensional aluminum phosphide semiconductor with tunable direct band gap for nanoelectric applications

More and more attractive applications of two-dimensional (2D) materials in nanoelectronic devices are being achieved successfully, which promotes the rapid and extensive development of new 2D materials. In this work, the structural and electronic properties of the V structure aluminum phosphide (V-A...

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Detalles Bibliográficos
Autores principales: Yang, Xuxin, Mao, Caixia, Hu, Yonghong, Cao, Hui, Zhang, Yuping, Zhao, Dong, Chen, Zhiyuan, Xie, Meiqiu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9055225/
https://www.ncbi.nlm.nih.gov/pubmed/35517490
http://dx.doi.org/10.1039/d0ra04424e

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9055225/
https://www.ncbi.nlm.nih.gov/pubmed/35517490
http://dx.doi.org/10.1039/d0ra04424e

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