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Two-dimensional aluminum phosphide semiconductor with tunable direct band gap for nanoelectric applications
More and more attractive applications of two-dimensional (2D) materials in nanoelectronic devices are being achieved successfully, which promotes the rapid and extensive development of new 2D materials. In this work, the structural and electronic properties of the V structure aluminum phosphide (V-A...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
The Royal Society of Chemistry
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9055225/ https://www.ncbi.nlm.nih.gov/pubmed/35517490 http://dx.doi.org/10.1039/d0ra04424e |