Solution-processable and photopolymerisable TiO(2) nanorods as dielectric layers for thin film transistors

We report the fabrication of a solution-processed n-type Thin Film Transistor (TFT) with current on/off ratios of 10(4), a turn-on voltage (V(ON)) of 1.2 V and a threshold voltage (V(T)) of 6.2 V. The TFT incorporates an insoluble and intractable dielectric layer (k = 7–9) prepared in situ from solu...

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Detalles Bibliográficos
Autores principales: Cheng, Fei, Verrelli, Emanuele, Alharthi, Fahad A., Das, Satyajit, Anthopoulos, Thomas D., Lai, Khue T., Kemp, Neil T., O'Neill, Mary, Kelly, Stephen M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9055251/
https://www.ncbi.nlm.nih.gov/pubmed/35518573
http://dx.doi.org/10.1039/d0ra04445h

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9055251/
https://www.ncbi.nlm.nih.gov/pubmed/35518573
http://dx.doi.org/10.1039/d0ra04445h

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