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Realistic dielectric response of high temperature sintered ZnO ceramic: a microscopic and spectroscopic approach
High temperature sintering (1200–1400 °C) has been performed on ZnO ceramics. An X-ray Absorption Fine Structure (XAFS) study shows that high sintering temperature introduces a constant amount of V(O) and V(Zn) defects without any significant effect on the crystal or electronic structure of Wurtzite...
Autores principales: | Ibadat, Sidra, Younas, Muhammad, Shahzada, Shaista, Nadeem, Muhammad, Ali, Tahir, Akhtar, Muhammad Javed, Pollastri, Simone, Rehman, Ubaid-Ur, Yousef, Ibraheem, Ali Khan, Rao Tahir |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
The Royal Society of Chemistry
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9056371/ https://www.ncbi.nlm.nih.gov/pubmed/35516023 http://dx.doi.org/10.1039/d0ra04273k |
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