Comparison of diverse resistive switching characteristics and demonstration of transitions among them in Al-incorporated HfO(2)-based resistive switching memory for neuromorphic applications

Diverse resistive switching behaviors are observed in the Pt/HfAlO(x)/TiN memory device depending on the compliance current, the sweep voltage amplitude, and the bias polarity. We extensively compare three types of resistive switching characteristics in a Pt/HfAlO(x)/TiN device in terms of endurance...

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Detalles Bibliográficos
Autores principales: Khan, Sobia Ali, Kim, Sungjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9056407/
https://www.ncbi.nlm.nih.gov/pubmed/35520690
http://dx.doi.org/10.1039/d0ra06389d

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9056407/
https://www.ncbi.nlm.nih.gov/pubmed/35520690
http://dx.doi.org/10.1039/d0ra06389d

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