Reactive ion etching of an ovonic threshold switch (OTS) material using hydrogen-based plasmas for non-volatile phase change memories

Etch characteristics of ovonic threshold switch (OTS) materials composed of Ge–As–Te for a phase-change random access memory (PCRAM) has been investigated using reactive ion etching via hydrogen-based gases such as H(2), CH(4), NH(3), CH(4) + H(2), and CH(4) + NH(3). Among the investigated hydrogen-...

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Detalles Bibliográficos
Autores principales: Kim, Doo San, Kim, Ju Eun, Gill, You Jung, Park, Jin Woo, Jang, Yun Jong, Kim, Ye Eun, Choi, Hyejin, Kwon, Oik, Yeom, Geun Young
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9056974/
https://www.ncbi.nlm.nih.gov/pubmed/35517099
http://dx.doi.org/10.1039/d0ra05321j

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9056974/
https://www.ncbi.nlm.nih.gov/pubmed/35517099
http://dx.doi.org/10.1039/d0ra05321j

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