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Reactive ion etching of an ovonic threshold switch (OTS) material using hydrogen-based plasmas for non-volatile phase change memories
Etch characteristics of ovonic threshold switch (OTS) materials composed of Ge–As–Te for a phase-change random access memory (PCRAM) has been investigated using reactive ion etching via hydrogen-based gases such as H(2), CH(4), NH(3), CH(4) + H(2), and CH(4) + NH(3). Among the investigated hydrogen-...
| Autores principales: | , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9056974/ https://www.ncbi.nlm.nih.gov/pubmed/35517099 http://dx.doi.org/10.1039/d0ra05321j |