The synthesis of competing phase GeSe and GeSe(2) 2D layered materials

We demonstrate the synthesis of layered anisotropic semiconductor GeSe and GeSe(2) nanomaterials through low temperature (∼400 °C) and atmospheric pressure chemical vapor deposition using halide based precursors. Results show that GeI(2) and H(2)Se precursors successfully react in the gas-phase and...

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Detalles Bibliográficos
Autores principales: Yumigeta, Kentaro, Brayfield, Cassondra, Cai, Hui, Hajra, Debarati, Blei, Mark, Yang, Sijie, Shen, Yuxia, Tongay, S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9057377/
https://www.ncbi.nlm.nih.gov/pubmed/35517551
http://dx.doi.org/10.1039/d0ra07539f

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9057377/
https://www.ncbi.nlm.nih.gov/pubmed/35517551
http://dx.doi.org/10.1039/d0ra07539f

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