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The synthesis of competing phase GeSe and GeSe(2) 2D layered materials
We demonstrate the synthesis of layered anisotropic semiconductor GeSe and GeSe(2) nanomaterials through low temperature (∼400 °C) and atmospheric pressure chemical vapor deposition using halide based precursors. Results show that GeI(2) and H(2)Se precursors successfully react in the gas-phase and...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9057377/ https://www.ncbi.nlm.nih.gov/pubmed/35517551 http://dx.doi.org/10.1039/d0ra07539f |