Improving the internal quantum efficiency of QD/QW hybrid structures by increasing the GaN barrier thickness

Three InGaN/GaN quantum well (QW) samples with different barrier thickness (Sample A: 15 nm, Sample B: 17.5 nm, and Sample C: 20 nm) were grown via a metal organic chemical vapor deposition (MOCVD) system. The InGaN/GaN QWs became QD/QW hybrid structures due to the high density of V-shaped pits (VPs...

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Detalles Bibliográficos
Autores principales: Jia, Zhigang, Hao, Xiaodong, Lu, Taiping, Dong, Hailiang, Jia, Zhiwei, Ma, Shufang, Liang, Jian, Jia, Wei, Xu, Bingshe
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9057776/
https://www.ncbi.nlm.nih.gov/pubmed/35516542
http://dx.doi.org/10.1039/d0ra05566b

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9057776/
https://www.ncbi.nlm.nih.gov/pubmed/35516542
http://dx.doi.org/10.1039/d0ra05566b

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