High quality N-polar GaN films grown with varied V/III ratios by metal–organic vapor phase epitaxy

We studied the growths and characterizations of N-polar GaN films grown with constant and varied V/III ratios in high-temperature (HT) GaN growth on offcut c-plane sapphire substrates by metal–organic vapor phase epitaxy. It is found that growth with a constantly low V/III ratio resulted in a high c...

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Detalles Bibliográficos
Autores principales: Li, Chengguo, Zhang, Kang, Qiaoyu Zeng, Yin, Xuebing, Ge, Xiaoming, Wang, Junjun, Wang, Qiao, He, Chenguang, Zhao, Wei, Chen, Zhitao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9058150/
https://www.ncbi.nlm.nih.gov/pubmed/35514894
http://dx.doi.org/10.1039/d0ra07856e

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9058150/
https://www.ncbi.nlm.nih.gov/pubmed/35514894
http://dx.doi.org/10.1039/d0ra07856e

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