High-performance thin H:SiON OLED encapsulation layer deposited by PECVD at low temperature

Highly moisture permeation resistive and transparent single layer thin films for the encapsulation of hydrogenated silicon oxynitrides (H:SiON) were deposited by plasma-enhanced chemical vapor deposition (PECVD) using silane (SiH(4)), nitrous oxide (N(2)O), ammonia (NH(3)), and hydrogen (H(2)) at 100 °C for applications to a top-emission organic light-emitting diode (TEOLED). Addition of H(2) into the PECVD process of SiON film deposition afforded the hydrogenated SiON film, which showed not only improved optical properties such as transmittance and reflectance but also better barrier property to water permeation than PECVD SiON and even SiN(x). The H:SiON film with thickness of only 80 nm exhibited water vapor transmission rate (WVTR) lower than 5 × 10(−5) g per m(2) per day in the test conditions of 38 °C and 100% humidity, where this WVTR is the measurement limit of the MOCON equipment. An additional coating of UV curable polymer enabled the H:SiON films to be flexible and to have very stable barrier property lower than 5 × 10(−5) g per m(2) per day even after a number of 10k times bending tests at a curvature radius of 1R. The mild H:SiON film process improved the electrical properties of top-emission OLEDs without generating any dark spots. Furthermore, single H:SiON films having high water vapor barrier could maintain the original illumination features of TEOLED longer than 720 hours. These excellent properties of the H:SiON thin films originated from the structural changes of the SiON material by the introduction of hydrogen.