Suppression of GeO(x) interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices

For high-performance nanoscale Ge-based transistors, one important point of focus is interfacial germanium oxide (GeO(x)), which is thermodynamically unstable and easily desorbed. In this study, an atomic-layer-deposited AlN buffer layer was introduced between the crystalline ZrO(2) high-K gate diel...

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Detalles Bibliográficos
Autores principales: Wang, Chin-I., Chang, Teng-Jan, Wang, Chun-Yuan, Yin, Yu-Tung, Shyue, Jing-Jong, Lin, Hsin-Chih, Chen, Miin-Jang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2019
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9059561/
https://www.ncbi.nlm.nih.gov/pubmed/35517609
http://dx.doi.org/10.1039/c8ra07652a

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9059561/
https://www.ncbi.nlm.nih.gov/pubmed/35517609
http://dx.doi.org/10.1039/c8ra07652a

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