Intense-pulsed-UV-converted perhydropolysilazane gate dielectrics for organic field-effect transistors and logic gates

We fabricated a high-quality perhydropolysilazane (PHPS)-derived SiO(2) film by intense pulsed UV irradiation and applied it as a gate dielectric layer in high-performance organic field-effect transistors (OFETs) and complementary inverters. The conversion process of PHPS to SiO(2) was optimized by...

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Detalles Bibliográficos
Autores principales: Back, Han Sol, Kim, Min Je, Baek, Jeong Ju, Kim, Do Hwan, Shin, Gyojic, Choi, Kyung Ho, Cho, Jeong Ho
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2019
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9059928/
https://www.ncbi.nlm.nih.gov/pubmed/35518960
http://dx.doi.org/10.1039/c8ra09831j

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9059928/
https://www.ncbi.nlm.nih.gov/pubmed/35518960
http://dx.doi.org/10.1039/c8ra09831j

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