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Intense-pulsed-UV-converted perhydropolysilazane gate dielectrics for organic field-effect transistors and logic gates

We fabricated a high-quality perhydropolysilazane (PHPS)-derived SiO(2) film by intense pulsed UV irradiation and applied it as a gate dielectric layer in high-performance organic field-effect transistors (OFETs) and complementary inverters. The conversion process of PHPS to SiO(2) was optimized by...

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Autores principales: Back, Han Sol, Kim, Min Je, Baek, Jeong Ju, Kim, Do Hwan, Shin, Gyojic, Choi, Kyung Ho, Cho, Jeong Ho
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9059928/
https://www.ncbi.nlm.nih.gov/pubmed/35518960
http://dx.doi.org/10.1039/c8ra09831j
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author Back, Han Sol
Kim, Min Je
Baek, Jeong Ju
Kim, Do Hwan
Shin, Gyojic
Choi, Kyung Ho
Cho, Jeong Ho
author_facet Back, Han Sol
Kim, Min Je
Baek, Jeong Ju
Kim, Do Hwan
Shin, Gyojic
Choi, Kyung Ho
Cho, Jeong Ho
author_sort Back, Han Sol
collection PubMed
description We fabricated a high-quality perhydropolysilazane (PHPS)-derived SiO(2) film by intense pulsed UV irradiation and applied it as a gate dielectric layer in high-performance organic field-effect transistors (OFETs) and complementary inverters. The conversion process of PHPS to SiO(2) was optimized by varying the number of intense pulses and applied voltage. The chemical structure and gate dielectric properties of the PHPS-derived SiO(2) films were systematically investigated via Fourier transform infrared spectroscopy and leakage current measurements, respectively. The resulting PHPS-derived SiO(2) gate dielectric layer showed a dielectric constant of 3.8 at 1 MHz and a leakage current density of 9.7 × 10(−12) A cm(−2) at 4.0 MV cm(−1). The PHPS-derived SiO(2) film was utilized as a gate dielectric for fabricating benchmark p- and n-channel OFETs based on pentacene and N,N′-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C(8)), respectively. The resulting OFETs exhibited good electrical properties, such as carrier mobilities of 0.16 (±0.01) cm(2) V(−1) s(−1) (for the pentacene OFET) and 0.02 (±0.01) cm(2) V(−1) s(−1) (for the PTCDI-C(8) OFET) and an on–off current ratio larger than 10(5). The fabrication of the PHPS-derived SiO(2) gate dielectric layer by a simple solution process and intense pulsed UV irradiation at room temperature serves as a novel approach for the realization of large-area flexible electronics in the flexible device industry of the future.
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spelling pubmed-90599282022-05-04 Intense-pulsed-UV-converted perhydropolysilazane gate dielectrics for organic field-effect transistors and logic gates Back, Han Sol Kim, Min Je Baek, Jeong Ju Kim, Do Hwan Shin, Gyojic Choi, Kyung Ho Cho, Jeong Ho RSC Adv Chemistry We fabricated a high-quality perhydropolysilazane (PHPS)-derived SiO(2) film by intense pulsed UV irradiation and applied it as a gate dielectric layer in high-performance organic field-effect transistors (OFETs) and complementary inverters. The conversion process of PHPS to SiO(2) was optimized by varying the number of intense pulses and applied voltage. The chemical structure and gate dielectric properties of the PHPS-derived SiO(2) films were systematically investigated via Fourier transform infrared spectroscopy and leakage current measurements, respectively. The resulting PHPS-derived SiO(2) gate dielectric layer showed a dielectric constant of 3.8 at 1 MHz and a leakage current density of 9.7 × 10(−12) A cm(−2) at 4.0 MV cm(−1). The PHPS-derived SiO(2) film was utilized as a gate dielectric for fabricating benchmark p- and n-channel OFETs based on pentacene and N,N′-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C(8)), respectively. The resulting OFETs exhibited good electrical properties, such as carrier mobilities of 0.16 (±0.01) cm(2) V(−1) s(−1) (for the pentacene OFET) and 0.02 (±0.01) cm(2) V(−1) s(−1) (for the PTCDI-C(8) OFET) and an on–off current ratio larger than 10(5). The fabrication of the PHPS-derived SiO(2) gate dielectric layer by a simple solution process and intense pulsed UV irradiation at room temperature serves as a novel approach for the realization of large-area flexible electronics in the flexible device industry of the future. The Royal Society of Chemistry 2019-01-23 /pmc/articles/PMC9059928/ /pubmed/35518960 http://dx.doi.org/10.1039/c8ra09831j Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by-nc/3.0/
spellingShingle Chemistry
Back, Han Sol
Kim, Min Je
Baek, Jeong Ju
Kim, Do Hwan
Shin, Gyojic
Choi, Kyung Ho
Cho, Jeong Ho
Intense-pulsed-UV-converted perhydropolysilazane gate dielectrics for organic field-effect transistors and logic gates
title Intense-pulsed-UV-converted perhydropolysilazane gate dielectrics for organic field-effect transistors and logic gates
title_full Intense-pulsed-UV-converted perhydropolysilazane gate dielectrics for organic field-effect transistors and logic gates
title_fullStr Intense-pulsed-UV-converted perhydropolysilazane gate dielectrics for organic field-effect transistors and logic gates
title_full_unstemmed Intense-pulsed-UV-converted perhydropolysilazane gate dielectrics for organic field-effect transistors and logic gates
title_short Intense-pulsed-UV-converted perhydropolysilazane gate dielectrics for organic field-effect transistors and logic gates
title_sort intense-pulsed-uv-converted perhydropolysilazane gate dielectrics for organic field-effect transistors and logic gates
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9059928/
https://www.ncbi.nlm.nih.gov/pubmed/35518960
http://dx.doi.org/10.1039/c8ra09831j
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