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Intense-pulsed-UV-converted perhydropolysilazane gate dielectrics for organic field-effect transistors and logic gates

We fabricated a high-quality perhydropolysilazane (PHPS)-derived SiO(2) film by intense pulsed UV irradiation and applied it as a gate dielectric layer in high-performance organic field-effect transistors (OFETs) and complementary inverters. The conversion process of PHPS to SiO(2) was optimized by...

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Detalles Bibliográficos
Autores principales:	Back, Han Sol, Kim, Min Je, Baek, Jeong Ju, Kim, Do Hwan, Shin, Gyojic, Choi, Kyung Ho, Cho, Jeong Ho
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	The Royal Society of Chemistry 2019
Materias:	Chemistry
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9059928/ https://www.ncbi.nlm.nih.gov/pubmed/35518960 http://dx.doi.org/10.1039/c8ra09831j

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