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Effects of Ga substitution on electronic and thermoelectric properties of gapless semiconductor V(3)Al
Thermoelectric properties of the antiferromagnetic (AF) gapless semiconductor (GS) V(3)Al were optimized by substituting Al with the isoelectric element Ga in the D0(3) structure. Structural and mechanical stability, electronic structure and transport properties of V(3)Al(1−x)Ga(x) (x = 0.25, 0.5, 0...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9060434/ https://www.ncbi.nlm.nih.gov/pubmed/35518079 http://dx.doi.org/10.1039/c8ra10471a |