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Effects of Ga substitution on electronic and thermoelectric properties of gapless semiconductor V(3)Al

Thermoelectric properties of the antiferromagnetic (AF) gapless semiconductor (GS) V(3)Al were optimized by substituting Al with the isoelectric element Ga in the D0(3) structure. Structural and mechanical stability, electronic structure and transport properties of V(3)Al(1−x)Ga(x) (x = 0.25, 0.5, 0...

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Detalles Bibliográficos
Autores principales:	Chen, Xiaorui, Huang, Yuhong, Liu, Jing, Yuan, Hongkuan, Chen, Hong
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	The Royal Society of Chemistry 2019
Materias:	Chemistry
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9060434/ https://www.ncbi.nlm.nih.gov/pubmed/35518079 http://dx.doi.org/10.1039/c8ra10471a

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