Correction: All-solution-processed, flexible thin-film transistor based on PANI/PETA as gate/gate insulator

Correction for ‘All-solution-processed, flexible thin-film transistor based on PANI/PETA as gate/gate insulator’ by Jin-Yong Hong et al., RSC Adv., 2015, 5, 105785–105788.

Detalles Bibliográficos
Autores principales: Hong, Jin-Yong, Shin, Kyoung-Hwan, Yoon, Dai Gun, Chin, Byung Doo, Kim, Sung Hyun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2019
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9060528/
https://www.ncbi.nlm.nih.gov/pubmed/35532468
http://dx.doi.org/10.1039/c8ra90105h

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9060528/
https://www.ncbi.nlm.nih.gov/pubmed/35532468
http://dx.doi.org/10.1039/c8ra90105h

Ejemplares similares