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Field-plate engineering for high breakdown voltage β-Ga(2)O(3) nanolayer field-effect transistors
The narrow voltage swing of a nanoelectronic device limits its implementations in electronic circuits. Nanolayer β-Ga(2)O(3) has a superior breakdown field of approximately 8 MV cm(−1), making it an ideal candidate for a next-generation power device nanomaterial. In this study, a field modulating pl...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9062201/ https://www.ncbi.nlm.nih.gov/pubmed/35520692 http://dx.doi.org/10.1039/c9ra01163c |