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Field-plate engineering for high breakdown voltage β-Ga(2)O(3) nanolayer field-effect transistors

The narrow voltage swing of a nanoelectronic device limits its implementations in electronic circuits. Nanolayer β-Ga(2)O(3) has a superior breakdown field of approximately 8 MV cm(−1), making it an ideal candidate for a next-generation power device nanomaterial. In this study, a field modulating pl...

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Detalles Bibliográficos
Autores principales:	Bae, Jinho, Kim, Hyoung Woo, Kang, In Ho, Kim, Jihyun
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	The Royal Society of Chemistry 2019
Materias:	Chemistry
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9062201/ https://www.ncbi.nlm.nih.gov/pubmed/35520692 http://dx.doi.org/10.1039/c9ra01163c

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