Formation of an MoTe(2) based Schottky junction employing ultra-low and high resistive metal contacts

Schottky-barrier diodes have great importance in power management and mobile communication because of their informal device technology, fast response and small capacitance. In this research, a p-type molybdenum ditelluride (p-MoTe(2)) based Schottky barrier diode was fabricated using asymmetric meta...

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Detalles Bibliográficos
Autores principales: Aftab, Sikandar, Iqbal, Muhammad Waqas, Afzal, Amir Muhammad, Khan, M. Farooq, Hussain, Ghulam, Waheed, Hafiza Sumaira, Kamran, Muhammad Arshad
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2019
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9062468/
https://www.ncbi.nlm.nih.gov/pubmed/35520896
http://dx.doi.org/10.1039/c8ra09656b

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9062468/
https://www.ncbi.nlm.nih.gov/pubmed/35520896
http://dx.doi.org/10.1039/c8ra09656b

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