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Formation of an MoTe(2) based Schottky junction employing ultra-low and high resistive metal contacts

Schottky-barrier diodes have great importance in power management and mobile communication because of their informal device technology, fast response and small capacitance. In this research, a p-type molybdenum ditelluride (p-MoTe(2)) based Schottky barrier diode was fabricated using asymmetric meta...

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Detalles Bibliográficos
Autores principales: Aftab, Sikandar, Iqbal, Muhammad Waqas, Afzal, Amir Muhammad, Khan, M. Farooq, Hussain, Ghulam, Waheed, Hafiza Sumaira, Kamran, Muhammad Arshad
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9062468/
https://www.ncbi.nlm.nih.gov/pubmed/35520896
http://dx.doi.org/10.1039/c8ra09656b
Descripción
Sumario:Schottky-barrier diodes have great importance in power management and mobile communication because of their informal device technology, fast response and small capacitance. In this research, a p-type molybdenum ditelluride (p-MoTe(2)) based Schottky barrier diode was fabricated using asymmetric metal contacts. The MoTe(2) nano-flakes were mechanically exfoliated using adhesive tape and with the help of dry transfer techniques, the flakes were transferred onto silicon/silicon dioxide (Si/SiO(2)) substrates to form the device. The Schottky-barrier was formed as a result of using ultra-low palladium/gold (Pd/Au) and high resistive chromium/gold (Cr/Au) metal electrodes. The Schottky diode exhibited a clear rectifying behavior with an on/off ratio of ∼10(3) and an ideality factor of ∼1.4 at zero gate voltage. In order to check the photovoltaic response, a green laser light was illuminated, which resulted in a responsivity of ∼3.8 × 10(3) A W(−1). These values are higher than the previously reported results that were obtained using conventional semiconducting materials. Furthermore, the barrier heights for Pd and Cr with a MoTe(2) junction were calculated to be 90 meV and 300 meV, respectively. In addition, the device was used for rectification purposes revealing a stable rectifying behavior.