Effect of Sb content on anisotropic magnetoresistance in a (Ga, Mn)(As, Sb) ferromagnetic semiconductor thin film

The effect of Sb content on the in-plane anisotropic magnetoresistance (AMR) of the quaternary ferromagnetic semiconductor (Ga, Mn)(As, Sb) was investigated. The results showed that the strain increased with Sb content, but the hole density was found to fluctuate. Dominant cubic and uniaxial symmetr...

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Detalles Bibliográficos
Autores principales: Wang, Wenjie, Chen, Jing, Deng, Jiajun, Che, Jiantao, Hu, Bing, Cheng, Xin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2019
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9062501/
https://www.ncbi.nlm.nih.gov/pubmed/35515316
http://dx.doi.org/10.1039/c8ra10256b

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9062501/
https://www.ncbi.nlm.nih.gov/pubmed/35515316
http://dx.doi.org/10.1039/c8ra10256b

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