Effect of Sb content on anisotropic magnetoresistance in a (Ga, Mn)(As, Sb) ferromagnetic semiconductor thin film

The effect of Sb content on the in-plane anisotropic magnetoresistance (AMR) of the quaternary ferromagnetic semiconductor (Ga, Mn)(As, Sb) was investigated. The results showed that the strain increased with Sb content, but the hole density was found to fluctuate. Dominant cubic and uniaxial symmetr...

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Autores principales: Wang, Wenjie, Chen, Jing, Deng, Jiajun, Che, Jiantao, Hu, Bing, Cheng, Xin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2019
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9062501/
https://www.ncbi.nlm.nih.gov/pubmed/35515316
http://dx.doi.org/10.1039/c8ra10256b
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author Wang, Wenjie
Chen, Jing
Deng, Jiajun
Che, Jiantao
Hu, Bing
Cheng, Xin
author_facet Wang, Wenjie
Chen, Jing
Deng, Jiajun
Che, Jiantao
Hu, Bing
Cheng, Xin
author_sort Wang, Wenjie
collection PubMed
description The effect of Sb content on the in-plane anisotropic magnetoresistance (AMR) of the quaternary ferromagnetic semiconductor (Ga, Mn)(As, Sb) was investigated. The results showed that the strain increased with Sb content, but the hole density was found to fluctuate. Dominant cubic and uniaxial symmetries were observed for the current along the [110] crystalline direction. The dependence of the symmetry on the Sb content was demonstrated for the longitudinal AMR, which mainly results from the alteration of the local stain relaxation and the hole density. A phenomenological analysis showed that the variation of the AMR coefficients is a good explanation for the observed experimental results.
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spelling pubmed-90625012022-05-04 Effect of Sb content on anisotropic magnetoresistance in a (Ga, Mn)(As, Sb) ferromagnetic semiconductor thin film Wang, Wenjie Chen, Jing Deng, Jiajun Che, Jiantao Hu, Bing Cheng, Xin RSC Adv Chemistry The effect of Sb content on the in-plane anisotropic magnetoresistance (AMR) of the quaternary ferromagnetic semiconductor (Ga, Mn)(As, Sb) was investigated. The results showed that the strain increased with Sb content, but the hole density was found to fluctuate. Dominant cubic and uniaxial symmetries were observed for the current along the [110] crystalline direction. The dependence of the symmetry on the Sb content was demonstrated for the longitudinal AMR, which mainly results from the alteration of the local stain relaxation and the hole density. A phenomenological analysis showed that the variation of the AMR coefficients is a good explanation for the observed experimental results. The Royal Society of Chemistry 2019-04-08 /pmc/articles/PMC9062501/ /pubmed/35515316 http://dx.doi.org/10.1039/c8ra10256b Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by-nc/3.0/
spellingShingle Chemistry
Wang, Wenjie
Chen, Jing
Deng, Jiajun
Che, Jiantao
Hu, Bing
Cheng, Xin
Effect of Sb content on anisotropic magnetoresistance in a (Ga, Mn)(As, Sb) ferromagnetic semiconductor thin film
title Effect of Sb content on anisotropic magnetoresistance in a (Ga, Mn)(As, Sb) ferromagnetic semiconductor thin film
title_full Effect of Sb content on anisotropic magnetoresistance in a (Ga, Mn)(As, Sb) ferromagnetic semiconductor thin film
title_fullStr Effect of Sb content on anisotropic magnetoresistance in a (Ga, Mn)(As, Sb) ferromagnetic semiconductor thin film
title_full_unstemmed Effect of Sb content on anisotropic magnetoresistance in a (Ga, Mn)(As, Sb) ferromagnetic semiconductor thin film
title_short Effect of Sb content on anisotropic magnetoresistance in a (Ga, Mn)(As, Sb) ferromagnetic semiconductor thin film
title_sort effect of sb content on anisotropic magnetoresistance in a (ga, mn)(as, sb) ferromagnetic semiconductor thin film
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9062501/
https://www.ncbi.nlm.nih.gov/pubmed/35515316
http://dx.doi.org/10.1039/c8ra10256b
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