Charge balance control of quantum dot light emitting diodes with atomic layer deposited aluminum oxide interlayers

We developed a 1.0 nm thick aluminum oxide (Al(2)O(3)) interlayer as an electron blocking layer to reduce leakage current and suppress exciton quenching induced by charge imbalance in inverted quantum dot light emitting diodes (QLEDs). The Al(2)O(3) interlayer was deposited by an atomic layer deposi...

Descripción completa

Detalles Bibliográficos
Autores principales: Jin, Hoseok, Moon, Hyungseok, Lee, Woosuk, Hwangbo, Hyeok, Yong, Sang Heon, Chung, Ho Kyoon, Chae, Heeyeop
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2019
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9063432/
https://www.ncbi.nlm.nih.gov/pubmed/35517031
http://dx.doi.org/10.1039/c9ra00145j

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9063432/
https://www.ncbi.nlm.nih.gov/pubmed/35517031
http://dx.doi.org/10.1039/c9ra00145j

Ejemplares similares