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Theoretical studies on the structures and properties of doped graphenes with and without an external electrical field

To expand the applications of graphene in optoelectronic devices, B, Al, Si, Ge, As, and Sb doped graphenes (marked as B-G, Al-G, Si-G, Ge-G, As-G, and Sb-G, respectively) were synthesised. The geometric structures, population analyses, and also electronic and optical properties of these doped graph...

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Detalles Bibliográficos
Autores principales: Wang, Yuhua, Wang, Weihua, Zhu, Shuyun, Yang, Ge, Zhang, Zhiqiang, Li, Ping
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9063496/
https://www.ncbi.nlm.nih.gov/pubmed/35517038
http://dx.doi.org/10.1039/c9ra00326f