Interfacial electronic structure between a W-doped In(2)O(3) transparent electrode and a V(2)O(5) hole injection layer for inorganic quantum-dot light-emitting diodes

The interfacial electronic structure between a W-doped In(2)O(3) (IWO) transparent electrode and a V(2)O(5) hole injection layer (HIL) has been investigated using ultraviolet photoelectron spectroscopy for high-performance and inorganic quantum-dot light-emitting diodes (QLEDs). Based on the interfa...

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Detalles Bibliográficos
Autores principales: Heo, Su Been, Yu, Jong Hun, Kim, Minju, Yi, Yeonjin, Lee, Ji-Eun, Kim, Han-Ki, Kang, Seong Jun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2019
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9063512/
https://www.ncbi.nlm.nih.gov/pubmed/35516983
http://dx.doi.org/10.1039/c9ra01520e

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9063512/
https://www.ncbi.nlm.nih.gov/pubmed/35516983
http://dx.doi.org/10.1039/c9ra01520e

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