AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing

AlN thin films were epitaxially grown on a 4H-SiC substrate via atomic layer deposition (ALD) along with atomic layer annealing (ALA). By applying the layer-by-layer, in situ ALA treatment using helium/argon plasma in each ALD cycle, the as-deposited film gets crystallization energy from the plasma,...

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Detalles Bibliográficos
Autores principales: Kao, Wei-Chung, Lee, Wei-Hao, Yi, Sheng-Han, Shen, Tsung-Han, Lin, Hsin-Chih, Chen, Miin-Jang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2019
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9063677/
https://www.ncbi.nlm.nih.gov/pubmed/35515870
http://dx.doi.org/10.1039/c9ra00008a

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9063677/
https://www.ncbi.nlm.nih.gov/pubmed/35515870
http://dx.doi.org/10.1039/c9ra00008a

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