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AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
AlN thin films were epitaxially grown on a 4H-SiC substrate via atomic layer deposition (ALD) along with atomic layer annealing (ALA). By applying the layer-by-layer, in situ ALA treatment using helium/argon plasma in each ALD cycle, the as-deposited film gets crystallization energy from the plasma,...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9063677/ https://www.ncbi.nlm.nih.gov/pubmed/35515870 http://dx.doi.org/10.1039/c9ra00008a |