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Effect of interfacial defects on the electronic properties of graphene/g-GaN heterostructures
To gain deep insights into their interactions, the effects of interfacial defects on the structural and electronic properties of graphene/g-GaN heterostructures were investigated by using first-principles calculations. The graphene/g-GaN-V(Ga) heterostructure maintains a p-type Schottky contact in t...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
The Royal Society of Chemistry
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9063968/ https://www.ncbi.nlm.nih.gov/pubmed/35519598 http://dx.doi.org/10.1039/c9ra01576k |