Cargando…

Effect of interfacial defects on the electronic properties of graphene/g-GaN heterostructures

To gain deep insights into their interactions, the effects of interfacial defects on the structural and electronic properties of graphene/g-GaN heterostructures were investigated by using first-principles calculations. The graphene/g-GaN-V(Ga) heterostructure maintains a p-type Schottky contact in t...

Descripción completa

Detalles Bibliográficos
Autores principales: Deng, Zhongxun, Wang, Xianhui, Cui, Jie
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9063968/
https://www.ncbi.nlm.nih.gov/pubmed/35519598
http://dx.doi.org/10.1039/c9ra01576k
_version_ 1784699267040935936
author Deng, Zhongxun
Wang, Xianhui
Cui, Jie
author_facet Deng, Zhongxun
Wang, Xianhui
Cui, Jie
author_sort Deng, Zhongxun
collection PubMed
description To gain deep insights into their interactions, the effects of interfacial defects on the structural and electronic properties of graphene/g-GaN heterostructures were investigated by using first-principles calculations. The graphene/g-GaN-V(Ga) heterostructure maintains a p-type Schottky contact in the spin-up channel and the Schottky barrier height (SBH) is decreased to 0.332 eV, but there is not a metal/semiconductor contact in the spin-down channel. However, the n-type SBH is negative for the graphene/g-GaN-V(N) heterostructure, indicating an ohmic contact. Furthermore, the SBH in the graphene/g-GaN heterostructure can be effectively modulated by the interlayer distance. The research could provide a strategy for the development and fabrication of efficient novel nanoelectronic devices.
format Online
Article
Text
id pubmed-9063968
institution National Center for Biotechnology Information
language English
publishDate 2019
publisher The Royal Society of Chemistry
record_format MEDLINE/PubMed
spelling pubmed-90639682022-05-04 Effect of interfacial defects on the electronic properties of graphene/g-GaN heterostructures Deng, Zhongxun Wang, Xianhui Cui, Jie RSC Adv Chemistry To gain deep insights into their interactions, the effects of interfacial defects on the structural and electronic properties of graphene/g-GaN heterostructures were investigated by using first-principles calculations. The graphene/g-GaN-V(Ga) heterostructure maintains a p-type Schottky contact in the spin-up channel and the Schottky barrier height (SBH) is decreased to 0.332 eV, but there is not a metal/semiconductor contact in the spin-down channel. However, the n-type SBH is negative for the graphene/g-GaN-V(N) heterostructure, indicating an ohmic contact. Furthermore, the SBH in the graphene/g-GaN heterostructure can be effectively modulated by the interlayer distance. The research could provide a strategy for the development and fabrication of efficient novel nanoelectronic devices. The Royal Society of Chemistry 2019-05-01 /pmc/articles/PMC9063968/ /pubmed/35519598 http://dx.doi.org/10.1039/c9ra01576k Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by-nc/3.0/
spellingShingle Chemistry
Deng, Zhongxun
Wang, Xianhui
Cui, Jie
Effect of interfacial defects on the electronic properties of graphene/g-GaN heterostructures
title Effect of interfacial defects on the electronic properties of graphene/g-GaN heterostructures
title_full Effect of interfacial defects on the electronic properties of graphene/g-GaN heterostructures
title_fullStr Effect of interfacial defects on the electronic properties of graphene/g-GaN heterostructures
title_full_unstemmed Effect of interfacial defects on the electronic properties of graphene/g-GaN heterostructures
title_short Effect of interfacial defects on the electronic properties of graphene/g-GaN heterostructures
title_sort effect of interfacial defects on the electronic properties of graphene/g-gan heterostructures
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9063968/
https://www.ncbi.nlm.nih.gov/pubmed/35519598
http://dx.doi.org/10.1039/c9ra01576k
work_keys_str_mv AT dengzhongxun effectofinterfacialdefectsontheelectronicpropertiesofgraphenegganheterostructures
AT wangxianhui effectofinterfacialdefectsontheelectronicpropertiesofgraphenegganheterostructures
AT cuijie effectofinterfacialdefectsontheelectronicpropertiesofgraphenegganheterostructures