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Effect of interfacial defects on the electronic properties of graphene/g-GaN heterostructures

To gain deep insights into their interactions, the effects of interfacial defects on the structural and electronic properties of graphene/g-GaN heterostructures were investigated by using first-principles calculations. The graphene/g-GaN-V(Ga) heterostructure maintains a p-type Schottky contact in t...

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Detalles Bibliográficos
Autores principales: Deng, Zhongxun, Wang, Xianhui, Cui, Jie
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9063968/
https://www.ncbi.nlm.nih.gov/pubmed/35519598
http://dx.doi.org/10.1039/c9ra01576k

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