Negative threshold voltage shift in an a-IGZO thin film transistor under X-ray irradiation

We investigated the effects of X-ray irradiation on the electrical characteristics of an amorphous In–Ga–Zn–O (a-IGZO) thin film transistor (TFT). The a-IGZO TFT showed a negative threshold voltage (V(TH)) shift of −6.2 V after 100 Gy X-ray irradiation. Based on spectroscopic ellipsometry (SE) and X...

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Detalles Bibliográficos
Autores principales: Kim, Dong-Gyu, Kim, Jong-Un, Lee, Jun-Sun, Park, Kwon-Shik, Chang, Youn-Gyoung, Kim, Myeong-Ho, Choi, Duck-Kyun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2019
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9065737/
https://www.ncbi.nlm.nih.gov/pubmed/35515555
http://dx.doi.org/10.1039/c9ra03053k

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9065737/
https://www.ncbi.nlm.nih.gov/pubmed/35515555
http://dx.doi.org/10.1039/c9ra03053k

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