Vertical semiconductor deep ultraviolet light emitting diodes on a nanowire-assisted aluminum nitride buffer layer

Vertical light-emitting diodes (LEDs) have many advantages such as uniform current injection, excellent scalability of the chip size, and simple packaging process. Hitherto, however, technologically important semiconductor aluminum gallium nitride (AlGaN) deep ultraviolet (UV) LEDs are mainly throug...

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Detalles Bibliográficos
Autores principales: Zhang, Qihua, Parimoo, Heemal, Martel, Eli, Zhao, Songrui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9068717/
https://www.ncbi.nlm.nih.gov/pubmed/35508615
http://dx.doi.org/10.1038/s41598-022-11246-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9068717/
https://www.ncbi.nlm.nih.gov/pubmed/35508615
http://dx.doi.org/10.1038/s41598-022-11246-0

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