Symmetrically Ion‐Gated In‐Plane Metal‐Oxide Transistors for Highly Sensitive and Low‐Voltage Driven Bioelectronics

To provide a unique opportunity for on‐chip scaled bioelectronics, a symmetrically gated metal‐oxide electric double layer transistor (EDLT) with ion‐gel (IG) gate dielectric and simple in‐plane Corbino electrode architecture is proposed. Using amorphous indium‐gallium‐zinc oxide (a‐IGZO) semiconduc...

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Detalles Bibliográficos
Autores principales: Kang, Jingu, Jang, Young‐Woo, Moon, Sang Hee, Kang, Youngjin, Kim, Jaehyun, Kim, Yong‐Hoon, Park, Sung Kyu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2022
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9069198/
https://www.ncbi.nlm.nih.gov/pubmed/35240004
http://dx.doi.org/10.1002/advs.202103275

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9069198/
https://www.ncbi.nlm.nih.gov/pubmed/35240004
http://dx.doi.org/10.1002/advs.202103275

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