Approaching subthreshold-swing limit for thin-film transistors by using a giant-dielectric-constant gate dielectric

Low-temperature giant-dielectric-constant thin films (In(0.0025)Nb(0.0025)Ti(0.995)O(2)) fabricated with simple radio frequency (RF) sputtering on glass substrates are employed as the gate dielectrics for thin-film transistors (TFTs) for the first time. The 380 nm-thick In(0.0025)Nb(0.0025)Ti(0.995)...

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Detalles Bibliográficos
Autores principales: Chen, Zhuo, Lan, Linfeng, Peng, Junbiao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2019
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9070635/
https://www.ncbi.nlm.nih.gov/pubmed/35528573
http://dx.doi.org/10.1039/c9ra03574e

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9070635/
https://www.ncbi.nlm.nih.gov/pubmed/35528573
http://dx.doi.org/10.1039/c9ra03574e

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