CVD controlled growth of large-scale WS(2) monolayers

Monolayer tungsten disulfide (WS(2)) with a direct band gap of ca. 2.0 eV and stable properties has been a hotspot in two-dimensional (2D) nanoelectronics and optoelectronics. However, it remains challenging to successfully prepare monolayer WS(2). In this paper, we report the chemical vapor deposit...

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Detalles Bibliográficos
Autores principales: Xu, Zhuhua, Lv, Yanfei, Li, Jingzhou, Huang, Feng, Nie, Pengbo, Zhang, Siwei, Zhao, Shichao, Zhao, Shixi, Wei, Guodan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2019
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9071935/
https://www.ncbi.nlm.nih.gov/pubmed/35531507
http://dx.doi.org/10.1039/c9ra06219j

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9071935/
https://www.ncbi.nlm.nih.gov/pubmed/35531507
http://dx.doi.org/10.1039/c9ra06219j

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