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Barrier thickness dependence of Mg(x)Zn(1−x)O/ZnO quantum well (QW) on the performance of a p-NiO/QW/n-ZnO photodiode
An Mg(x)Zn(1−x)O/ZnO quantum well (QW) structure, with various barrier (Mg(x)Zn(1−x)O layer) thicknesses, was inserted into p-NiO/n-ZnO heterojunction photodiodes (HPDs) by using a radio-frequency magnetron sputtering system. The effect of various barrier thicknesses on the performance of QW-PDs was...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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The Royal Society of Chemistry
2019
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9072091/ https://www.ncbi.nlm.nih.gov/pubmed/35531536 http://dx.doi.org/10.1039/c9ra06131b |